Non-volatile memory device, operating method thereof, and storage device including the non-volatile memory device
US11049547B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2020 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | Aug 5, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5634
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes multiple word lines. A method of operating the memory device includes: performing a first dummy read operation, with respect to first memory cells connected to a first word line among the word lines, by applying a dummy read voltage, having an offset level of a first level, to the first word line; determining, based on a result of the performing of the first dummy read operation, degradation of a threshold voltage distribution of the first memory cells; adjusting an offset level of the dummy read voltage as a second level, based on a result of the determining of the threshold voltage distribution; and performing a second dummy read operation with respect to second memory cells connected to a second word line among the word lines, by applying a dummy read voltage, having the offset level adjusted as the second level, to the second word line among the word lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.