Method for programming a phase-change memory device of differential type, memory device, and electronic system
US11049561B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2020 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | Jun 16, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0078
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for programming a phase-change-memory device of a differential type comprises, in a first programming mode, supplying, during a first time interval, a same first programming current, of a type chosen between a SET current and a RESET current, to all the direct and complementary memory cells that are to be programmed with said first programming current; and, in a second programming mode, supplying, during a second time interval, a same second programming current, of the other type chosen between a SET current and a RESET current, to all the direct and complementary memory cells that are to be programmed with said second programming current, thus completing, in just two time steps, writing of a logic word in the memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.