Single beam plasma source
US11049697B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 19, 2019 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | Jun 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3146
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A single beam plasma or ion source apparatus is provided. Another aspect employs an ion source including multiple magnets and magnetic shunts arranged in a generally E cross-sectional shape. A further aspect of an ion source includes magnets and/or magnetic shunts which create a magnetic flux with a central dip or outward undulation located in an open space within a plasma source. In another aspect, an ion source includes a removeable cap attached to an anode body which surrounds the magnets. Yet a further aspect provides a single beam plasma source which generates ions simultaneously with target sputtering and at the same internal pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.