Method for preparing array substrate by stripping first photo-resist layer through wet etching before forming ohm contact layer and active layer
US11049889B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Sep 21, 2018 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | May 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This disclosure provides an array substrate, a method for fabricating the same, a display panel, and a display device, where a first photo-resist layer is stripped in a changed order in that the first photo-resist layer on a source-drain is stripped through wet etching before a ohm contact layer film and an active layer film are etched in an electrically-conductive channel area (i.e., an electrically-conductive channel of a TFT is etched) to form an ohm contact layer and an active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.