Coating liquid for forming oxide or oxynitride insulator film, oxide or oxynitride insulator film, field-effect transistor, and method for producing the same
US11049951B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 29, 2019 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | May 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A coating liquid for forming an oxide or oxynitride insulator film, the coating liquid including: A element; at least one selected from the group consisting of B element and C element; and a solvent, wherein the A element is at least one selected from the group consisting of Sc, Y, Ln (lanthanoid), Sb, Bi, and Te, the B element is at least one selected from the group consisting of Ga, Ti, Zr, and Hf, the C element is at least one selected from the group consisting of Group 2 elements in a periodic table, and the solvent includes at least one selected from the group consisting of an organic solvent having a flash point of 21° C. or more but less than 200° C. and water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.