Silicon carbide semiconductor device and power converter

US11049963B2 · kind B2 · utility

Assignee

• Mitsubishi Electric Corporation · JP

Inventors

• Shiro Hino · Tokyo, JP
• Yuichi NAGAHISA · Tokyo, JP
• Koji Sadamatsu · Tokyo, JP
• Hideyuki HATTA · Tokyo, JP
• Kotaro KAWAHARA · Tokyo, JP

Key dates

• Filing date: Dec 18, 2018
• Grant date: Jun 29, 2021
• Expiry date: Dec 18, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/105

Abstract

In SiC-MOSFETs including Schottky diodes, passage of a bipolar current to a well region in an edge portion of an active region cannot be sufficiently reduced, which may reduce the reliability of elements. In a SiC-MOSFET including Schottky diodes, the Schottky diodes formed in a terminal region are made higher in density in a plane direction than those formed in the active region or intervals between the Schottky diodes in the plane direction are shortened, without an ohmic connection between the well and the source in the terminal region.