Semiconductor device and alternator using the same
US11049965B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2018 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | Jan 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first external electrode with a first electrode surface portion; a second external electrode with a second electrode surface portion; a MOSFET chip with a built-in Zener diode which includes an active region and a peripheral region; a control IC chip which drives the MOSFET chip based on voltage or current between a drain electrode and a source electrode of the MOSFET chip; and a capacitor which supplies power to the MOSFET chip and the control IC chip. The first electrode surface portion is connected to either the drain electrode or the source, the second electrode surface portion is connected to either the source electrode or the drain electrode, a plurality of unit cells of the MOSFET with the built-in Zener diode are provided in the active region, and the breakdown voltage of the Zener diode is set to be lower than that of the peripheral region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.