Optoelectronic device comprising three-dimensional semiconductor structures with a wider single-crystal portion
US11049997B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2016 |
| Grant date | Jun 29, 2021 |
| Priority date | — |
| Expiry date | Mar 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
Abstract
The invention relates to an optoelectronic device, having at least one microwire or nanowire extending along a longitudinal axis substantially orthogonal to a plane of a substrate, and including: a first doped portion produced from a first semiconductor compound; an active zone extending from the first doped portion; a second doped portion, at least partially covering the active zone; characterised in that the active zone comprises a wider single-crystal portion: formed of a single crystal of a second semiconductor compound and at least one additional element; extending from an upper face of one end of the first doped portion, and having a mean diameter greater than that of the first doped portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.