Micro panchromatic QLED array device based on quantum dot transfer process of deep silicon etching templates, and preparation method therefor

US11050004B2 · kind B2 · utility

Assignee

• Nanjing University · CN

Inventors

• Bin Liu · Nanhu, CN
• Di Jiang · Beijing, CN
• Junchi Yu · Nanjing, CN
• Xuan Wang · Xuzhou, CN
• Danfeng Pan · Nanjing, CN
• Zili Xie · Nanjing, CN
• Yugang Zhou · Markham, CA
• Dunjun Chen · Nanjing, CN
• Xiangqian Xiu · Jiangshui, CN
• Rong Zhang · 安丰镇, CN

Key dates

• Filing date: Nov 11, 2019
• Grant date: Jun 29, 2021
• Expiry date: Nov 11, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/832

Abstract

A micro panchromatic QLED array device based on a quantum dot transfer process of deep silicon etching templates. Array-type square table structures pass through a p-type GaN layer and a quantum well active layer and are deep to an n-type GaN layer are disposed on a blue LED epitaxial wafer, wherein micro holes are formed through etching in the structures. Every 2*2 table structures constitute an RGB pixel unit. Among the four micro holes, three of the holes are filled with red light, green light and yellow light quantum dots respectively, and one of the holes emits blue light/is filled with a blue light quantum dot. Micro holes in a silicon wafer are formed through etching with a deep silicon etching technology; the micro holes in the silicon wafer are aligned with quantum dot filling areas on a micro-LED.