Patent · US Active

Photonic devices

US11054673B2 · kind B2 · utility

0Cited by

8References

11Claims

0Family size

Assignees

RAYTHEON BBN TECHNOLOGIES CORP. · US
Raytheon Company · US

Inventors

Mohammad Soltani · Belmont, US
Eduardo M. Chumbes · Andover, US

Key dates

Filing date	Jun 9, 2020
Grant date	Jul 6, 2021
Priority date	—
Expiry date	Jun 9, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Photonic devices having Al1-xScxN and AlyGa1-yN materials, where Al is Aluminum, Sc is Scandium, Ga is Gallium, and N is Nitrogen and where 0<x≤0.45 and 0≤y≤1.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.