Ionization chamber chip for a nano-aperture ion source, method of fabrication thereof, and a proton beam writing system
US11056315B2 · kind B2 · utility
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3References
20Claims
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Key dates
| Filing date | Jul 27, 2018 |
| Grant date | Jul 6, 2021 |
| Priority date | — |
| Expiry date | Jul 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31737
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ionization chamber chip, a nano-aperture ion source, a proton beam writing system, and a method of fabricating an ionization chamber chip. The method comprises the step of providing a first substrate comprising a first depression formed in a back surface thereof; providing a backing element attached at the back surface of the first substrate such that a chamber is formed comprising at least the first depression; forming a gas inlet in the first substrate in fluid communication with the chamber; and forming a first aperture structure in the first substrate in fluid communication with the chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.