System and method for particle control in MRAM processing
US11056324B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 2, 2019 |
| Grant date | Jul 6, 2021 |
| Priority date | — |
| Expiry date | Aug 2, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A system and method for reducing particle contamination on substrates during a deposition process using a particle control system is disclosed here. In one embodiment, a film deposition system includes: a processing chamber sealable to create a pressurized environment and configured to contain a plasma, a target and a substrate in the pressurized environment; and a particle control unit, wherein the particle control unit is configured to provide an external force to each of at least one charged atom and at least one contamination particle in the plasma, wherein the at least one charged atom and the at last one contamination particle are generated by the target when it is in direct contact with the plasma, wherein the external force is configured to direct the at least one charged atom to a top surface of the substrate and to direct the at least one contamination particle away from the top surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.