Thin film electrode separation method using thermal expansion coefficient
US11056339B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2018 |
| Grant date | Jul 6, 2021 |
| Priority date | — |
| Expiry date | Aug 7, 2038 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81B2203/04
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a thin film electrode separation method using thermal expansion coefficient, a first solution is coated on a substrate. The first solution coated on the substrate is hardened. The substrate is left in a predetermined time, to form a first thin film having a first thermal expansion coefficient on the substrate. A photoresist is coated on the substrate having the thin film formed thereon. The photoresist coated on the substrate is hardened, to form a photoresist film having a second thermal expansion coefficient. A metal and a passivation layer are formed on the photoresist film. The photoresist film is detached from the first thin film, using difference of a thermal expansion coefficient between the photoresist film and the first thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.