Thin film based semiconductor devices and methods of forming a thin film based semiconductor device
US11056430B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2020 |
| Grant date | Jul 6, 2021 |
| Priority date | — |
| Expiry date | Mar 10, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/47
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to various embodiments, a semiconductor device may include a thin film arranged within a first inter-level dielectric layer, a masking region, and a contact plug. The masking region may be arranged over the thin film, within the first inter-level dielectric layer. The masking region may be structured to have a higher etch rate than the first inter-level dielectric layer. The contact plug may extend along a vertical axis, from a second inter-level dielectric layer to the thin film. A bottom portion of the contact plug may be surrounded by the masking region. The bottom portion of the contact plug may include a lateral member that extends along a horizontal plane at least substantially perpendicular to the vertical axis. The lateral member may be in contact with the thin film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.