Patent · US Active

Method of manufacturing fan-out wafer level package

US11056461B2 · kind B2 · utility

0Cited by
7References
19Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 21, 2020
Grant dateJul 6, 2021
Priority date
Expiry dateJan 21, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/97
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Provided is a method of manufacturing a semiconductor package including providing a carrier substrate, providing sacrificial layer on the carrier substrate, the sacrificial layer including a first sacrificial layer and a second sacrificial layer, providing a redistribution wiring layer on the sacrificial layer, providing a plurality of semiconductor chips on the redistribution wiring layer, providing a mold layer provided on the sacrificial layer, the redistribution wiring layer, and the plurality of semiconductor chips, detaching the first sacrificial layer from the second sacrificial layer, and dicing the second sacrificial layer, the redistribution wiring layer, and the mold layer, wherein a diameters of the first sacrificial layer and the second sacrificial layer are respectively less than a diameter of the carrier substrate, and a diameter of the mold layer is greater than the diameter of the redistribution wiring layer and less than the diameter of the first sacrificial layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.