Display device having a plurality of thin-film transistors with different semiconductors
US11056509B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2019 |
| Grant date | Jul 6, 2021 |
| Priority date | — |
| Expiry date | Aug 1, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1216
Abstract
A display device includes a substrate; a buffer layer disposed on the substrate; a first thin-film transistor comprising a first active layer made of a low-temperature poly-silicon (LTPS), a first gate electrode overlapping with the first active layer with the first gate insulating layer and the second gate insulating layer therebetween, and a first source electrode and a first drain electrode electrically connected to the first active layer; and a second thin-film transistor comprising a second active layer made of an oxide semiconductor, a second gate electrode overlapping with the second active layer with the second gate insulating layer therebetween, and a second source electrode and a second drain electrode electrically connected to the second active layer. The first gate electrode of the first thin-film transistor and the second gate electrode of the second thin-film transistor may be disposed on the second gate insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.