Low CTE boro-aluminosilicate glass for glass carrier wafers

US11059738B2 · kind B2 · utility

Assignee

• SCHOTT GLASS TECHNOLOGIES (SUZHOU) CO. LTD. · CN

Inventors

• Pengxiang Qian · Shanghai, CN
• Yunfei Hou · Hubei, CN
• Junming Xue · Suzhou, CN
• Rainer Liebald · Nauheim, DE
• Hiroshi Kuroki · Tokyo, JP

Key dates

• Filing date: Aug 1, 2018
• Grant date: Jul 13, 2021
• Expiry date: Sep 20, 2038

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C03C27/00
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

A low CTE boro-aluminosilicate glass having a low brittleness for use in wafer-level-packaging (WLP) applications is disclosed. The glass comprises a composition in mol-% of SiO2: 60-85, Al2O3: 1-17, B2O3: 8-20, Na2O: 0-5, K2O: 0-5, MgO: 0-10, CaO: 0-10, SrO: 0-10, and BaO: 0-10. An average number of non-bridging oxygen per polyhedron (NBO) is equal to or larger than −0.2 and a ratio B2O3/Al2O3 is equal to or larger than 0.5. The NBO is defined as NBO=2×Omol/(Simol+Almol+Bmol)−4. A glass carrier wafer made from the low CTE boro-aluminosilicate glass and a use thereof as a glass carrier wafer for the processing of a silicon substrate are also disclosed, as well as a method for providing a low CTE boro-aluminosilicate glass.