In situ generation of gaseous precursors for chemical vapor deposition of a chalcogenide
US11060186B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2019 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Aug 16, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45512
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method provided herein for forming a chalcogenide film on a substrate, an elemental solid is exposed to a hydrogen halide gas in a heated reaction environment at a temperature at which the hydrogen halide gas promotes the elemental solid to evolve into an elemental halide-based gas. The elemental halide-based gas is then exposed to a chalcogen gas provided in the heated reaction environment, at a temperature at which the elemental halide-based gas is reactive with the chalcogen gas to produce a solid chalcogenide reaction product. A substrate is provided in the heated reaction environment for deposition thereon of a solid film of the solid chalcogenide reaction product that results from exposure of the elemental halide-based gas to the chalcogen gas in the heated reaction environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.