Thin film capacitor embedded substrate and its manufacturing method
US11062851B2 · kind B2 · utility
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Key dates
| Filing date | Feb 13, 2020 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Feb 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/385
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed herein is a thin film capacitor embedded substrate that includes a substrate and a plurality of thin film capacitors including at least first and second thin film capacitors embedded in the substrate. The first and second thin film capacitors are connected in parallel and have mutually different self-resonant frequencies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.