High-frequency device and manufacturing method thereof
US11062979B2 · kind B2 · utility
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4Claims
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Key dates
| Filing date | Jun 3, 2020 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Jun 3, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01Q1/38
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-frequency device manufacturing method is provided. The method includes providing a substrate; forming a conductive material on the substrate; standing the substrate and the conductive material for a first time duration; forming a conductive layer by sequentially repeating the steps of forming the conductive material and standing at least once; and patterning the conductive layer. The thickness of the conductive layer is in a range from 0.9 μm to 10 μm. A high-frequency device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.