Silicon carbide semiconductor device and power conversion device
US11063122B2 · kind B2 · utility
1Cited by
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6Claims
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Key dates
| Filing date | Oct 24, 2017 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Feb 27, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In a termination region of a SiC-MOSFET, suppressing operation of a p-n diode between a well and a drift layer sometimes decreases reliability during high-speed switching. In a termination region of a SiC-MOSFET with a built-in SBD are provided second well region having an impurity concentration lower than the impurity concentration in a well region in an active region, and a high-concentration region that is formed on a surface layer of the second well region, has an impurity concentration higher than the impurity concentration in the well region in the active region, and is ohmic-connected to a source electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.