Silicon carbide semiconductor device and method for manufacturing same
US11063145B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2020 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Jan 30, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
Abstract
A silicon carbide semiconductor device includes: a substrate; a first impurity region on the substrate; a base region on the first impurity region; a second impurity region in the base region; a trench gate structure including a gate insulation film and a gate electrode in a trench; a first electrode connected to the second impurity region and the base region; a second electrode on a rear surface of the substrate; a first current dispersion layer between the first impurity region and the base region; a plurality of first deep layers in the second current dispersion layer; a second current dispersion layer between the first current dispersion layer and the base region; and a second deep layer between the first current dispersion layer and the base region apart from the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.