Semiconductor devices
US11063150B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2019 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Jul 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6219
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include active fins each of which extends in a first direction on a substrate, the active fins being spaced apart from each other in a second direction different from the first direction, a conductive structure extending in the second direction on the substrate, the conductive structure contacting the active fins, a first diffusion break pattern between the substrate and the conductive structure, the first diffusion break pattern dividing a first active fin of the active fins into a plurality of pieces aligned in the first direction, and a second diffusion break pattern adjacent to the conductive structure on the substrate, the second diffusion break pattern having an upper surface higher than a lower surface of the conductive structure, and dividing a second active fin of the active fins into a plurality of pieces aligned in the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.