Method for producing a device with light emitting and/or light receiving diodes and with self-aligned collimation grid

US11063172B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

• Gabriel Pares · Bernin, FR

Key dates

• Filing date: Dec 6, 2019
• Grant date: Jul 13, 2021
• Expiry date: Dec 19, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/857

Abstract

A method is provided for producing a device with light emitting/light receiving diodes, including: producing, on a substrate, a stack including first and second doped semiconductor layers; first etching of the stack, forming first openings through the entire thickness of the second layer; producing dielectric portions covering, in the first openings, the side walls of the second layer; second etching of the stack, extending the first openings until reaching the substrate, delimiting the p-n junctions of the diodes; etching extending the first openings into a part of the substrate; producing first electrically conductive portions in the first openings, forming first electrodes of the diodes, and producing second electrodes electrically connected to the second layer; and eliminating the substrate, forming a collimation grid.