Light emitting diode and manufacturing method of light emitting diode
US11063174B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 15, 2019 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Oct 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
Abstract
A light emitting diode (LED) includes: a device substrate; a first semiconductor layer above the device substrate, and doped with an n-type dopant; a second semiconductor layer above the first semiconductor layer, and doped with a p-type dopant; an active layer between the first semiconductor layer and the second semiconductor layer and configured to provide light; a transparent electrode layer adjacent to an upper part of the second semiconductor layer; and a first electrode pad and a second electrode pad between the device substrate and the first semiconductor layer, the first electrode pad electronically connected with the first semiconductor layer and the second electrode pad electrically connected with the second semiconductor layer, wherein light provided by the active layer is irradiated to an outside in a direction from the active layer to the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.