Patterned epitaxial substrate and semiconductor structure
US11063181B2 · kind B2 · utility
1Cited by
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23Claims
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Key dates
| Filing date | Oct 31, 2019 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Jan 10, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/855
Abstract
A patterned epitaxial substrate includes a substrate and a plurality of patterns. The substrate has a first zone and a second zone surrounding the first zone. The first zone and the second zone are disposed in a concentric manner. The patterns and the substrate are integrally formed, and the patterns are disposed on the substrate. The patterns include a plurality of first patterns and a plurality of second patterns. The first patterns are disposed in the first zone. The second patterns are disposed in the second zone. Sizes of the first patterns are different from sizes of the second patterns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.