Elastic wave device
US11063202B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 2, 2018 |
| Grant date | Jul 13, 2021 |
| Priority date | — |
| Expiry date | Oct 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/88
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An elastic wave device that utilizes a longitudinal wave leaky elastic wave includes a first medium layer, a second medium layer stacked on the first medium layer either directly or indirectly and that is a silicon oxide layer, a piezoelectric film stacked on the second medium layer either directly or indirectly, and an IDT electrode disposed on the piezoelectric film either directly or indirectly. In the elastic wave device, ρ1×C11, which is a product of a density ρ1 (kg/m3) of the first medium layer and an elastic constant C11 of the first medium layer, is larger than ρ0×C11, which is a product of a density ρ0 (kg/m3) of the piezoelectric film and an elastic constant C11 of the piezoelectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.