Patent · US Active

Method for processing, in particular separating, a substrate by means of laser-induced deep reactive etching

US11065716B2 · kind B2 · utility

0Cited by

0References

12Claims

0Family size

Assignee

LPKF LASER & ELECTRONICS AG · DE

Inventors

Roman Ostholt · Langenhagen, DE
Norbert Ambrosius · Kevelaer, DE
Daniel Dunker · Hannover, DE
Arne Schnoor · Hannover, DE

Key dates

Filing date	Apr 6, 2018
Grant date	Jul 20, 2021
Priority date	—
Expiry date	Apr 6, 2038

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB23K2103/54
WIPO fieldMachine tools
WIPO sectorMechanical engineering

Abstract

A method for machining, in particular for cutting an, in particular, planar substrate by laser-induced deep etching includes: moving laser radiation along a machining line; directing individual pulses onto the planar substrate at a spatial laser pulse distance (d); and subsequently removing an anisotropic material by etching at an etching rate (r) and an etching duration (t). Machining parameters are set according to a condition: 1>d/(R*t)>10−5.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.