Stress sensor structure and a manufacturing method thereof
US11067459B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 2017 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | Mar 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/871
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention discloses a stress sensor structure and a manufacturing method thereof, wherein the stress sensor structure comprises: a substrate; a blind-hole, provided on a first surface of the substrate; a first piezoresistive layer and a second piezoresistive layer, formed by material with piezoresistive effect, provided on a lateral wall of the blind-hole and interconnected at bottom portions of the layers; a second insulating layer, provided between the first piezoresistive layer and the second piezoresistive layer; a first electrode, provided on the first surface of the substrate and connected to the first piezoresistive layer; a second electrode, provided on the first surface of the substrate and connected to the second piezoresistive layer. The resistance measured by applying an external voltage between the first electrode and the second electrode can be used to indicator a stress of the TSV structure, in particular an axial stress thereof, so that the stress sensor can be used to measure a stress of the TSV structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.