Patent · US Active

Thin film capacitor

US11069483B2 · kind B2 · utility

1Cited by

0References

4Claims

0Family size

Assignee

TDK CORPORATION · JP

Inventors

Hiroshi Takasaki · Tokyo, JP
Masahiro Hiraoka · Tokyo, JP
Hitoshi Saita · Chuo, JP

Key dates

Filing date	Sep 25, 2018
Grant date	Jul 20, 2021
Priority date	—
Expiry date	Oct 10, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01G4/1254
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A thin film capacitor includes a first electrode layer (10), a dielectric layer (20) stacked on the first electrode layer (10), and a second electrode layer (30) stacked on the dielectric layer (20), wherein the dielectric layer (20) includes a layered void aggregation region (22) which extends in a direction orthogonal to a stacking direction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.