Laser assisted SiC growth on silicon
US11069527B2 · kind B2 · utility
0Cited by
5References
21Claims
0Family size
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Key dates
| Filing date | Apr 2, 2018 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | Oct 25, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A heterojunction device is provided. The heterojunction device includes a silicon (Si) substrate; and a film of silicon carbide (SiC) deposited on a surface of the Si substrate. The SiC has a Si:C ratio that increases or decreases from a SiC surface in contact with the Si substrate to an opposing SiC surface that is not in contact with the Si substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.