Patent · US Active

Etching platinum-containing thin film using protective cap layer

US11069530B2 · kind B2 · utility

0Cited by

8References

17Claims

0Family size

Assignee

TEXAS INSTRUMENTS INCORPORATED · US

Inventors

Sebastian Meier · Munich, DE
Helmut Rinck · Moosburg an der Isar, DE
Mike Mittelstaedt · Berglern, DE

Key dates

Filing date	Nov 19, 2019
Grant date	Jul 20, 2021
Priority date	—
Expiry date	Nov 19, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A microelectronic device is formed by forming a platinum-containing layer on a substrate of the microelectronic device. A cap layer is formed on the platinum-containing layer so that an interface between the cap layer and the platinum-containing layer is free of platinum oxide. The cap layer is etchable in an etch solution which also etches the platinum-containing layer. The cap layer may be formed on the platinum-containing layer before platinum oxide forms on the platinum-containing layer. Alternatively, platinum oxide on the platinum-containing layer may be removed before forming the cap layer. The platinum-containing layer may be used to form platinum silicide. The platinum-containing layer may be patterned by forming a hard mask or masking platinum oxide on a portion of the top surface of the platinum-containing layer to block the wet etchant.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.