Semiconductor device and method for manufacturing semiconductor device
US11069591B2 · kind B2 · utility
1Cited by
14References
19Claims
0Family size
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Key dates
| Filing date | Sep 4, 2019 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | Jan 16, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor chip having a passivation film, a stress relieving layer provided on the passivation film, and a groove formed in a periphery of a surface of the semiconductor chip, the groove being provided inside of an edge of the semiconductor chip, wherein the stress relieving layer is partly disposed in the groove.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.