Carrier injection control fast recovery diode structures

US11069770B2 · kind B2 · utility

Assignee

• IPOWER SEMICONDUCTOR · US

Inventor

• Hamza Yilmaz · Saratoga, US

Key dates

• Filing date: Jun 24, 2019
• Grant date: Jul 20, 2021
• Expiry date: Jun 24, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/60

Abstract

Semiconductor devices and methods of fabrication are provided. The semiconductor device includes a Charge Injection Controlled (CIC) Fast Recovery Diode (FRD) to control charge injection by lowering carrier storage. The device can have a first conductivity type semiconductor substrate, and a drift region that includes a doped buffer region, a doped middle region and a doped field stop region or carrier storage region. The device can also include a second conductivity type shield region including a deep junction encircling (or substantially laterally beneath) the buffer region and a second conductivity type shallow junction anode region in electrical contact with a second conductivity type anode electrode. The deep junction can have a range of doping concentrations surrounding the buffer regions to deplete buffer charge laterally as well as vertically to prevent premature device breakdown. The first conductivity type may be N type and the second conductivity type may be P type.