Coating liquid for forming oxide, method for producing oxide film, and method for producing field-effect transistor
US11069780B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2019 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | Mar 14, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A coating liquid for forming an oxide, the coating liquid including: A element, which is at least one alkaline earth metal; and B element, which is at least one selected from the group consisting of gallium (Ga), scandium (Sc), yttrium (Y), and lanthanoid, wherein when a total of concentrations of the A element is denoted by CA mg/L and a total of concentrations of the B element is denoted by CB mg/L, a total of concentrations of sodium (Na) and potassium (K) in the coating liquid is (CA+CB)/103 mg/L or less and a total of concentrations of chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), and copper (Cu) in the coating liquid is (CA+CB)/103 mg/L or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.