Trench power transistor and method of producing the same
US11069794B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2019 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | Sep 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor production method includes etching a semiconductor substrate to form at least one upper trench portion, sequentially depositing first and second insulating materials over the substrate and partially removing the second insulating material, etching the substrate to form a lower trench portion, depositing a third insulating material over the substrate, disposing a polycrystalline silicon (pc-Si) material in the trench portions and partially removing such material, depositing a fourth insulating material over the substrate and partially removing the third and fourth insulating materials, removing the second insulating material and disposing another pc-Si material in the upper trench portion, and forming a well and a source on the substrate. A trench power transistor thus produced is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.