Field effect transistor including gradually varying composition channel
US11069802B2 · kind B2 · utility
1Cited by
7References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2019 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | Jan 16, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
Provided is a field effect transistor (FET) including a gradually varying composition channel. The FET includes: a drain region; a drift region on the drain region; a channel region on the drift region; a source region on the channel region; a gate penetrating the channel region and the source region in a vertical direction; and a gate oxide surrounding the gate. The channel region has a gradually varying composition along the vertical direction such that an intensity of a polarization in the channel region gradually varies.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.