Field-effect transistors with channel regions that include a two-dimensional material on a mandrel
US11069819B2 · kind B2 · utility
4Cited by
2References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 30, 2019 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | Jan 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures for a field-effect transistor and methods of forming structures for a field-effect transistor. A gate electrode has a section that is wrapped about a first side surface and a second side surface of a mandrel that is composed of a dielectric material. A channel layer has a channel region that is positioned in part between the first side surface of the mandrel and the section of the gate electrode. The channel layer is composed of a two-dimensional material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.