Transition metal chalcogenide van der waals films, methods of making same, and apparatuses and devices comprising same
US11069822B2 · kind B2 · utility
1Cited by
10References
20Claims
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Key dates
| Filing date | Jul 10, 2017 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | Jul 10, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are van der Waals (VDW) films comprising one or more transition metal chalcogenide (TMD) films. Also provided are methods of making VDW films. The methods are based on transfer of monolayer TMD films under vacuum, for example, using a handle layer. Also provided are apparatuses and devices comprising one or more VDW film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.