Photosensitive device with electric shutter
US11069826B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2019 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | Jul 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/147
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A photosensitive transistor or voltage-mode device which comprises a gate electrode, a layer of ambipolar two-dimensional material such as graphene and a layer of photoactive semiconducting material forms a junction with the ambipolar two-dimensional material. The photoactive semiconducting material and the ambipolar two-dimensional material are configured so that there is a non-screening gate voltage interval where an interface voltage at the junction between the photoactive semiconducting layer and the ambipolar two-dimensional material can be changed by applying to the gate electrode a gate voltage which falls within the non-screening gate voltage interval. The non-screening gate voltage interval comprises a flat-band gate voltage at which the interface voltage is zero. An electrical shutter can be operated at this gate voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.