Patent · US Active

Optoelectronic semiconductor chip and method of manufacturing the same

US11069835B2 · kind B2 · utility

0Cited by
1References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 16, 2018
Grant dateJul 20, 2021
Priority date
Expiry dateMar 16, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/824
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.