Method of forming an electro-optical device with lateral current injection regions
US11070029B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2019 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | Apr 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/04257
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Embodiments are directed to the fabrication of an electro-optical device. The device comprises the forming of an active region with a stack of III-V semiconductor gain materials stacked along a stacking direction z. The active region may be formed as a slab having several lateral surface portions, each extending parallel to the stacking direction z. The device further comprises selectively re-growing two paired elements, which include: a pair of doped layers of III-V semiconductor materials (an n-doped layer and a p-doped layer); and a pair of lateral waveguide cores. The two paired elements may be laterally arranged, two-by-two, on opposite sides of the slab. The elements distinctly adjoin respective ones of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab. The disclosure may be further directed to related silicon photonics devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.