Waveguide heterostructure for dispersion compensation in semiconductor laser
US11070030B2 · kind B2 · utility
0Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2018 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | Sep 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3401
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A waveguide heterostructure for a semiconductor laser with an active part, comprising an active region layer depending of the type of semiconductor used, which is sandwiched between an electrode layer and a substrate, usable for dispersion compensation in a semiconductor laser frequency comb setup, an optical frequency comb setup and a manufacturing method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.