Elastic wave device, radio-frequency front-end circuit, and communication device
US11070193B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 24, 2018 |
| Grant date | Jul 20, 2021 |
| Priority date | — |
| Expiry date | Oct 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/704
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An elastic wave device includes a piezoelectric material layer, an IDT electrode on the piezoelectric material layer, and a dielectric film covering the IDT electrode. The IDT electrode includes a first electrode layer and a second electrode layer laminated on the first electrode layer. Each of wavelength normalized film thicknesses of the first and second electrode layers is equal to or greater than about 1.25%, and is normalized using a wave length defined by the electrode finger pitch of the IDT electrode. The second electrode layer has a density lower than that of the first electrode layer. The side of the second electrode layer is inclined with respect to the thickness direction of the IDT electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.