Vertical thermal gradient compensation in a z-axis MEMS accelerometer
US11073531B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2019 |
| Grant date | Jul 27, 2021 |
| Priority date | — |
| Expiry date | Sep 5, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0831
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A microelectromechanical (MEMS) accelerometer has a proof mass and a fixed electrode. The fixed electrode is located relative to the proof mass such that a capacitance formed by the fixed electrode and the proof mass changes in response to a linear acceleration along a sense axis of the accelerometer. The MEMS accelerometer is exposed to heat sources that produce a z-axis thermal gradient in MEMS accelerometer and an in-plane thermal gradient in the X-Y plane of the MEMS accelerometer. The z-axis thermal gradient is sensed with a plurality of thermistors located relative to anchoring regions of a CMOS layer of the MEMS accelerometer. The configuration of the thermistors within the CMOS layer measures the z-axis thermal gradient while rejecting other lateral thermal gradients. Compensation is performed at the accelerometer based on the z-axis thermal gradient.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.