Method and system for a vertical junction high-speed phase modulator
US11073738B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2018 |
| Grant date | Jul 27, 2021 |
| Priority date | — |
| Expiry date | Nov 30, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/12
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Methods and systems for a vertical junction high-speed phase modulator are disclosed and may include a semiconductor device having a semiconductor waveguide including a slab section, a rib section extending above the slab section, and raised ridges extending above the slab section on both sides of the rib section. The semiconductor device has a vertical pn junction with p-doped material and n-doped material arranged vertically with respect to each other in the rib and slab sections. The rib section may be either fully n-doped or p-doped in each cross-section along the semiconductor waveguide. Electrical connection to the p-doped and n-doped material may be enabled by forming contacts on the raised ridges, and electrical connection may be provided to the rib section from one of the contacts via periodically arranged sections of the semiconductor waveguide, where a cross-section of both the rib section and the slab section in the periodically arranged sections may be fully n-doped or fully p-doped.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.