Deposition apparatus including cleaning gas valve unit and deposition method including the same
US11075059B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 4, 2019 |
| Grant date | Jul 27, 2021 |
| Priority date | — |
| Expiry date | May 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32862
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A deposition apparatus includes a deposition gas supply unit including an opening and closing valve. The deposition gas supply unit is configured to selectively supply a source gas or a mixture gas into a chamber. A cleaning gas supply unit is configured to supply a cleaning gas into the chamber. A deposition head includes a first deposition head including a first nozzle configured to supply the source gas and the cleaning gas and a second deposition head including a second nozzle configured to supply the source gas, the mixture gas, and the cleaning gas. An exhaust unit is configured to discharge the cleaning gas and remaining source and mixture gases from the chamber. A cleaning gas valve unit is configured to be selectively opened and closed to supply the cleaning gas to at least any one of the first deposition head and the second deposition head.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.