Wafer scale ultrasonic sensing device and manufacturing method thereof
US11075072B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 14, 2020 |
| Grant date | Jul 27, 2021 |
| Priority date | — |
| Expiry date | May 14, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2021/60195
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer scale ultrasonic sensing device includes a substrate assembly, an ultrasonic component, a first protective layer, a first conductive circuit, a second conductive circuit, a second protective layer, a conductive material, electrical connection layers, and soldering portions. The substrate assembly includes a first wafer and a second wafer, and the second wafer covers a groove on the first wafer to define a hollow chamber. The first wafer, the second wafer, and the first protective layer are coplanar with the first conductive circuit on a first side surface and coplanar with the second conductive circuit on a second side surface. The second protective layer has an opening, where the conductive material is in the opening and is in contact with the ultrasonic component. The electrical connection layers are on the first side surface and the second side surface, and the soldering portions are respectively connected to the electrical connection layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.