Focus ring for plasma etcher
US11075087B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2019 |
| Grant date | Jul 27, 2021 |
| Priority date | — |
| Expiry date | Oct 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes mounting a wafer on a chuck disposed within a chamber of an etching system, the wafer being encircled by a focus ring. While etching portions of the wafer, an etch direction is adjusted to a first desired etch direction by adjusting a vertical position of the focus ring relative to the wafer to a first desired vertical position. While etching portions of the wafer, the etch direction is adjusted to a second desired etch direction by adjusting the vertical position of the focus ring relative to the wafer to a second desired vertical position. The second desired vertical position is different from the first desired vertical position. The second desired etch direction is different from the first desired etch direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.