Method of manufacturing image sensor
US11075238B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2019 |
| Grant date | Jul 27, 2021 |
| Priority date | — |
| Expiry date | Jul 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/811
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing an image sensor includes at least the following steps. A storage node is formed in a substrate. A gate dielectric layer, a storage gate electrode, and a first dielectric layer are sequentially formed over the substrate. A portion of the first dielectric layer is removed to form an opening. A protection layer and a shielding layer are sequentially filled into the opening. The protection layer laterally surrounds the shielding layer and at least a portion of the protection layer is located between the storage gate electrode and the shielding layer. A second dielectric layer is formed over the shielding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.